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PD -91845
IRF1104S/L
HEXFET ? Power MOSFET
l
Advanced Process Technology
l
l
Ultra Low On-Resistance
Surface Mount (IRF1104S)
D
V DSS = 40V
l Low-profile through-hole (IRF1104L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
G
S
R DS(on) = 0.009 ?
I D = 100A ?
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
D P ak
highest power capability and the lowest possible on-resistance
in any existing surface mount package. The D 2 Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
in a typical surface mount application.
The through-hole version (IRF1104L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
2
Max.
T O -26 2
Units
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T A = 25°C
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V ?
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
100 ?
71 ?
400
2.4
170
1.1
±20
350
60
17
5.0
A
W
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
–––
–––
0.9
62
°C/W
www.irf.com
1
11/20/98
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